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Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 90: Inhomogeneous Materials for Solar Cells

HL 90.3: Talk

Friday, March 24, 2017, 12:00–12:15, POT 81

Band gap changes in Cu2ZnSn(S,Se)4 solar cell absorbers with varying Cu concentration — •Mario Lang1, Tobias Renz1, Niklas Mathes1, Markus Neuwirth1, Thomas Schnabel2, Simon Woska1, Heinz Kalt1, and Michael Hetterich1,31Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg, 70565 Stuttgart, Germany — 3Light Technology Institute, KIT, 76131 Karlsruhe, Germany

The efficiency of Cu2ZnSn(S,Se)4 solar cells highly depends on the composition of the absorber layer. A Cu-poor and Zn-rich composition is crucial for highly efficient devices. This is due to the fact that unwanted and harmful secondary phases and defects are reduced in this case. The effect of the Cu content is not only relevant for the efficiency but also for certain optical device parameters as, e.g., the band gap. In this contribution we analyse the influence of the Cu content of Cu-poor Cu2ZnSn(S,Se)4 solar cell absorbers on several optical properties and device parameters. We find an increase in band gap with decreasing Cu content whereas the band tailing does not change. Furthermore, the defect luminescence shifts in parallel to the band gap but does also not change its nature.

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