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Dresden 2017 – scientific programme

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MA: Fachverband Magnetismus

MA 25: Ferroics - Domains, Domain Walls and Skyrmions I

MA 25.6: Talk

Tuesday, March 21, 2017, 11:15–11:30, WIL B321

Functional electronic inversion layers at ferroelectric domain walls — •Jakob Schaab1, Julia A. Mundy2, Yu Kumagai1, Andres Cano3, Massimiliano Stengel4, Darrel G. Schlom2, David A. Muller2, Ramamoorthy Ramesh5, Manfred Fiebig1, Nicola A. Spaldin1, and Dennis Meier61ETH Zürich — 2Cornell University — 3CNRS, Université de Bordeaux — 4ICMAB-CSIC Barcelona — 5UC Berkeley — 6NTNU Trondheim

Ferroelectric domain walls hold great promise as functional 2D-materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors.

Here, we will present electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behavior at charged walls in semiconducting ErMnO3. We relate the transition to the formation - and eventual activation - of an inversion layer that acts as the channel for the charge transport. Our conductive atomic force microscopy (cAFM) and electron energy loss spectroscopy (EELS) data provide new insight to the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital components for all-domain-wall circuitry.

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