Dresden 2017 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 18: Semiconductor Substrates: Structure, Epitaxy and Growth

O 18.2: Vortrag

Montag, 20. März 2017, 16:15–16:30, WIL C307

Patterning of ultra sharp dopant profiles in siliconSimon Cooil1,2, Federico Mazzola1, Hagen Klemm3, Gina Peschel3, Yuran Niu4, Alex Zhakarov4, Andrew Evans2, Thomas Schmidt3, Michelle Simmons5, •Jill Miwa6, and Justin Wells11NTNU, Trondheim, Norway — 2Aberystwyth University, Aberystwyth, UK — 3Fritz Haber Institute, Berlin, Germany — 4MAX IV Laboratory, Lund, Sweden — 5UNSW, Sydney, Australia — 6Aarhus University, Aarhus, Denmark

We present a method for patterning a buried two-dimensional electron gas (2DEG) in silicon. The buried 2DEG forms from placing an ultra sharp and dense profile of phosphorus dopants beneath the silicon surface; a so-called Si:P δ-layer. The composition and structure of these Si:P δ-layers have been studied down to the atomic limit by secondary ion mass spectrometry and scanning tunnelling microscopy. Both angle resolved photoemission spectroscopy and theoretical calculations have shown that these Si:P δ-layers host a 2DEG with properties desirable for atomic scale quantum electronic devices. Here, we provide a new method for patterning such buried 2DEGs using low kinetic energy electron beam lithography. Using a combination of microscopic and spectroscopic techniques, we demonstrate the formation of patterned features with dopant concentrations sufficient to create 2DEG states.

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