Dresden 2017 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 18: Semiconductor Substrates: Structure, Epitaxy and Growth

O 18.4: Vortrag

Montag, 20. März 2017, 16:45–17:00, WIL C307

In situ surface control of AlP on GaP(100) substrate during processing in MOCVD ambient — •Manali Nandy, Agnieszka Paszuk, Anja Dobrich, Oliver Supplie, Peter Kleinschmidt, and Thomas Hannappel — TU Ilmenau, Gustav-Kirchhoff-Straße 5 (Meitnerbau) 98693 Ilmenau

Epitaxial growth of III-V materials on Si substrate can be beneficial for cost-effective devices in optoelectronic applications. However the nucleation of III-V materials like AlxGa1-xP material grown on Si(100) substrate could serve as a buffer layer for other III-V materials, due to small lattice mismatch between the Si and AlxGa1-xP(from 0.36%-0.37% for x=0 to 1)[2]. Here,first we focus on the growth of AlP buffers on GaP(100) substrate. After deoxidation of GaP(100) substrates at 630°C under H2 ambient, we have grown GaP buffer layer prior to growth of AlP epilayer. The growth temperature was kept at 600°C and the reactor pressure was constant at 100 mbar throughout the process. The whole process was monitored in-situ by reflection anisotropy spectroscopy (RAS). The RAS signal taken at 300°C from the AlP surface shows a clear, distinguishable intense peak at 3.62 eV; probably corresponds to a Phosphorus-rich AlP(100) surface and in addition, we observe a continuous change in the RAS line shape with increasing temperature without phosphorus stabilization. Above 720°C we observe a second clear distinguishable RA-signal which may be corresponds to a Al-rich surface. [1] H. Kawanami, Solar Energy Materials & Solar Cells 66, 479 (2001) [2] H. Kroemer, J. Cryst. Growth, 81,193 (1987)

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