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Dresden 2017 – scientific programme

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O: Fachverband Oberflächenphysik

O 32: Focus Session: Charge Transport at Surfaces and Nanostructures with Multi-probe Techniques I

O 32.7: Talk

Tuesday, March 21, 2017, 12:30–12:45, WIL C307

Interface Conductivity of Tellurium on Si(111) Investigated by in situ Charge Transport Measurements with a Multi-Tip STMFelix Lüpke1, •Sven Just1, Martin Lanius1, Gustav Bihlmayer1, Jiri Dolezal2, Martina Luysberg1, Elmar Neumann1, Vasily Cherepanov1, Ivan Ostadal2, Gregor Mussler1, Detlev Grützmacher1, and Bert Voigtländer11Peter Grünberg Institut (PGI) and JARA-FIT, Forschungszentrum Jülich — 2Departement of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University Prague, Czech Republic

A combined experimental and theoretical analysis of the structural and electrical transport properties of a Tellurium layer on Si(111) is presented. The Te forms a Te/Si(111)-(1×1) reconstruction saturating the substrate bonds and forming the template for van der Waals epitaxy, e.g. for the topological insulator Bi2Te3 based thin fim growth on Si(111). As DFT calculations propose a high carrier concentration in the Te layer, the interface layer might be highly conductive limiting the applicability of the on-top grown film. For determining the conductivity of the Te interface layer on differently reconstructed Si surfaces directly, in situ distance-dependent four-probe resistance measurements with a multi-tip STM are carried out. In a second part, further four-probe measurements on different material systems are presented, e.g. on semiconductors combined with an N-layer model for describing multiple interface layers arising from an approximation of the space-charge region, and on the weak topological insulator Bi14Rh3I9 proposed to have one-dimensional edge-channels on the surface.

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