Dresden 2017 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 79: Electronic Structure of Surfaces: Spectroscopy, Surface States I

O 79.11: Vortrag

Mittwoch, 22. März 2017, 17:45–18:00, WIL C307

Non-symmorphic band degeneracy at the Fermi level in ZrSiTe — •Andreas Topp1, Judith M. Lippmann1,2, Andrei Varykhalov3, Viola Duppel1, Shweta Sheoran1, Bettina V. Lotsch1,2,4, Christian R. Ast1, and Leslie M. Schoop11Max Planck Institute for Solid State Research, D-70569 Stuttgart — 2Department of Chemistry, Ludwig-Maximilians-Universität, D-81377 München — 3Helmholtz-Zentrum Berlin für Materialien und Energie, Bessy II, D-12489 Berlin — 4Nanosystems Initiative Munich (NIM) & Center for Nanoscience, D-80799 München

Three-dimensional Dirac semimetals, which accommodate massless Dirac or Weyl fermions, show exotic physical properties, e.g. an extremely high mobility and giant magnetoresistance. Compounds that contain non-symmorphic symmetries are especially interesting, because they exibit band crossings that are not affected by SOC. ZrSiS, hosting a square lattice of Si atoms, exhibits normal, as well as, non-symmorphically protected 3D Dirac crossings below and above the Fermi level [1]. Pinning these non-symmorphic crossings to the Fermi level can be difficult, since it requires a material with a half-filled band, that is usually not stable. Upon replacing S with Te, the resulting chemical uniaxial strain shifts the position of the non-symmorphic crossing. Here, we present ARPES data and DFT calculations confirming that the non-symmorphic crossing is located at the Fermi level in ZrSiTe, making this compound a strong candidate to investigate the effect of forced band degeneracies on transport properties.

[1] L. M. Schoop et al., Nat. Comm. 7, 11696 (2016).

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