Münster 2017 – wissenschaftliches Programm
T 114.3: Vortrag
Donnerstag, 30. März 2017, 17:30–17:45, F 073
Development of radiation-hard 3D pixel sensors for the HL-LHC — •Jörn Lange, Emanuele Cavallaro, Fabian Förster, Sebastian Grinstein, Ivan Lopez Paz, Maria Manna, Stefano Terzo, and David Vazquez Furelos — IFAE Barcelona, Spain
3D silicon detectors, with cylindrical electrodes that penetrate the sensor bulk perpendicular to the surface, present a radiation-hard sensor technology. Due to a reduced electrode distance, trapping is less and the operational voltage and power dissipation after heavy irradiation is significantly lower than for planar devices. During the last years, the 3D technology has matured and 3D pixel detectors are already used in HEP detectors where superior radiation hardness is key: the ATLAS IBL and the ATLAS Forward Proton detector.
For the High-Luminosity upgrade of the Large Hadron Collider (HL-LHC), the radiation-hardness requirements are even more demanding with fluences up to 1–2×1016 neq/cm2 for the innermost pixel layers of the ATLAS and CMS experiments. Moreover, for occupancy reasons, smaller pixel sizes of 50×50 or 25×100 µm2 are planned.
In this work, the suitability of 3D pixel sensors for the HL-LHC innermost pixel layers is studied. Firstly, the radiation hardness of the already existing IBL/AFP generation is investigated up to HL-LHC fluences. Secondly, a new dedicated HL-LHC generation of 3D sensors is developed and tested, which is designed for the smaller pixel sizes and to even further improve the radiation hardness with smaller electrode distances. Laboratory and beam test results of 3D pixel detectors before and after irradiation will be presented.