Münster 2017 – wissenschaftliches Programm
T 114.5: Vortrag
Donnerstag, 30. März 2017, 18:00–18:15, F 073
Edge effects of radiation damaged silicon pad diodes — •Benedict Tohermes, Eckhart Fretwurst, Erika Garutti, Michael Hufschmidt, Robert Klanner, and Jörn Schwandt — Institut für Experimentalphysik, Universität Hamburg
Edge effects for square p+n silicon pad diodes fabricated on high-ohmic silicon are investigated.
Using capacitance-voltage measurements of two pad diodes with different areas and 320 µm thickness, the planar and the edge contributions to the diode capacitance are determined. For the non-irradiated pad diodes the doping profile is determined. The results with and without edge corrections differ significantly. Without edge correction the value of the bulk doping determined increases by up to 30 % over the depth of the diode, with edge correction it is uniform within ± 1.5 %, which agrees with expectation.
Edge corrections are determined both for non-irradiated diodes and for diodes irradiated to a fluence of 2.4 · 1015neq/cm2 with 24 GeV/c protons. The edge correction for irradiated diodes is found to be larger than for non-irradiated ones.