Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 1: Layer Properties: Electronic, Optical and Mechanical

DS 1.2: Vortrag

Montag, 12. März 2018, 09:45–10:00, H 0111

Disorder Control in Crystalline GeSb2Te4 and its Impact on Characteristic Length Scales — •Matthias M. Dück1, Tobias Schäfer1, Marc Pohlmann1, Carl-Friedrich Schön1, Hannah Niehaus1, and Matthias Wuttig1,211. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2JARA-FIT, RWTH Aachen University, Germany

Chalcogenides along the pseudobinary line between GeTe and Sb2Te3 (GST) are currently gaining much attention, since a number of interesting properties is observed in this material group, which contains phase-change materials, thermoelectrics, topological insulators and superconductors. Phase-change materials from the GST system have recently been reported to exhibit a disorder-induced metal-to-insulator transition, which is not linked to the transition from the metastable to the stable phase of this material. The MIT has been attributed to the ordering of stoichiometric vacancies, which leads to charge carrier delocalization. The current work is based on reports of a correlation between vacancy layer formation in textured films and their electronic transport properties. A systematic study of low temperature transport in combination with highly textured GST thin films provides further insights in the mechanisms of disorder induced charge carrier localization. In this talk, the relationship between characteristic length scales for atomic arrangement as well as electronic transport in the GST124 system will be elucidated. A comparative analysis of the results reveals the importance of vacancy ordering in this system, as well as the insignificance of grain boundaries for the material’s properties.

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