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Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II

DS 10.2: Talk

Monday, March 12, 2018, 15:15–15:30, E 020

The electric field dependence of the permittivity of SrTiO3 — •Julian Stoever, Laura Bogula, Toni Markut, Jos Boschker, Jutta Schwarzkopf, Martin Albrecht, and Klaus Irmscher — Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany

Resistive switching in SrTiO3 belongs to the interesting applications in the fast growing field of oxide electronics. Oxygen vacancy diffusion due to high electric fields in the depletion layer of SrTiO3 Schottky diodes is a commonly used model to describe the resistive switching behaviour. The dependence of the permittivity on the electric field strength has been rarely taken into account for SrTiO3 resistive switching devices. The permittivity of SrTiO3 is strongly dependent on the temperature and the electric field. Additionally, capacitance-voltage and current-voltage characteristics show deviations of the C-2-V relation and the thermionic-emission model, respectively. Theoretical models were developed that assume a non-linear dielectric response of the crystal [Reich et al. Phys. Rev. B, 91 11 (2015)]. Another approach is the introduction of a low-permittivity interlayer, as it was done by Yamamoto et al. [Jpn. J. Appl. Phys. 37 4737 (1998)]. To verify the theoretical approaches, fundamental measurements of the permittivity are necessary. We performed permittivity measurements at different temperatures and electric fields on plate capacitor structures made of insulating SrTiO3. The results will be compared with the behaviour of the Schottky diodes and are important for characterization methods like deep level transient spectroscopy.

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