Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster Session I

DS 17.17: Poster

Dienstag, 13. März 2018, 18:15–20:15, Poster B

Influence of Ga incorporation into bixbyite In₂O₃ thin films on the performance of Schottky barrier diodes thereon — •Daniel Splith, Steffen Lanzinger, Sophie Müller, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany

Oxide semiconductors like In₂O₃ are promising materials for a new generation of transparent electronic devices. Although first Schottky contacts on In₂O₃ were realized recently using a reactive sputtering process [1], rectification of such contacts remained poor. Incorporation of Mg, acting as an acceptor in In₂O₃, improves the rectification [2]. Further improvement can be expected from Ga incorporation into the bixbyite In₂O₃ phase, since In incorporation into the monoclinic β-Ga₂O₃ phase decreases the barrier height of Schottky contacts on β-Ga₂O₃ thin films significantly [3].

In this contribution we investigate the influence of Ga incorporation into the bixbyite In₂O₃ phase on the rectifying behavior of Schottky contacts. In₂O₃ thin films with and without Ga admixture were grown by pulsed laser deposition. Schottky contacts were realized by sputtering of Pt. In the IV-characteristics, a significantly smaller reverse current can be observed for the samples having a Ga admixture, leading to an improved rectification. Additionally, first thermal admittance spectroscopy measurements were performed on such thin films.
[1] H. von Wenckstern et al., APL Mat. 2(4), 046104 (2014)
[2] F. Schmidt et al., Phys. Status Solidi B, 252(10), 2304-2308 (2015)
[3] H. von Wenckstern et al., ACS Comb. Sci. 17(12), 710-715 (2015)