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Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I

DS 3.6: Talk

Monday, March 12, 2018, 10:45–11:00, E 020

Influence of nitrogen annealing on the properties of spray pyrolysis grown In-doped ZnO thin filmsDilawar Ali1,2, Muhammad Z. Butt1, David Caffrey2, Igor V. Shvets2, and •Karsten Fleischer21Department of Physics and Centre for Advanced Studies in Physics, GC University Lahore-54000, Pakistan — 2School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland

The properties of a low cost transparent conducting oxide (TCO) – spray pyrolysis grown ZnO thin films doped with indium have been investigated. We analyze the optical, electrical, and crystallographic properties as function of In content with a specific focus on post-growth heat treatment of these thin films at 320C in an inert, nitrogen atmosphere, which remarkably improves the films electrical properties. The effect was found to be dominated by nitrogen induced grain boundary passivation, identified by a combined study using in-situ resistance measurement upon annealing, X-ray photoelectron spectroscopy, photoluminescence and X-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. In optimized growth and post-annealing conditions, ZnO:In with a resistivity as low as 2×10−3 Ωcm and high optical quality has been obtained using low cost spray pyrolysis.

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