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Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I

DS 3.7: Talk

Monday, March 12, 2018, 11:00–11:15, E 020

Modulation of the In2O3 surface electron transport properties by acceptor doping — •Alexandra Papadogianni1, Julius Rombach1, Theresa Berthold2, Stefan Krischok2, Marcel Himmerlich2, and Oliver Bierwagen11Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany — 2Institut für Physik und Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany

In2O3 is a natively n-type transparent semiconducting oxide possessing a surface electron accumulation layer (SEAL) like several other relevant oxides, such as SnO2 and ZnO. While the SEAL is within the core of In2O3-based conductometric gas sensors, it hinders numerous applications of In2O3 in electronic devices that require the formation of Schottky contacts. Tunability of the SEAL is hence necessary to unlock the entire spectrum of possible device applications of In2O3.
Oxygen plasma treatment of the In2O3 surface has been previously shown to effectively deplete surface electrons. Annealing the material, however, has been proven to reverse this effect, which renders this solution unsuitable for devices operating at elevated temperatures. As an alternative, we demonstrate strong reduction of the SEAL by doping with the deep compensating acceptors Mg and Ni performing X-Ray Photoelectron Spectroscopy (XPS) and transport measurements on high quality single-crystalline In2O3(111) films grown by plasma-assisted molecular beam epitaxy (PA-MBE). This method also allows for fine-tuning of the electrical transport properties of the SEAL through controllably selecting its degree of depletion.

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