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HL: Fachverband Halbleiterphysik
HL 24: Poster Session II
HL 24.21: Poster
Tuesday, March 13, 2018, 18:30–20:30, Poster F
Identification of individual transitions in InGaAsSb/GaP quantum dot by power and temperature dependent photoluminescence — •Petr Steindl1,2, Petr Petr Klenovský1,2, Elisa Maddalena Sala3, Benito Alén4, and Dieter Bimberg3 — 1Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 2, 61137 Brno, Czech Republic — 2Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno, Czech Republic — 3Institut für Festkörperphysik Technische Universität Berlin, Hardenbergstraße 36 10623 Berlin, Germany — 4Instituto de Micro y Nanotecnología, IMN-CNM, CSIC Isaac Newton, 8 PTM Tres Cantos 28760 Madrid, Spain
We investigated a set of InGaAsSb/GaP quantum dot samples by photoluminescence spectroscopy. These structures are interesting because they combine direct and indirect optical transitions. We reveal those transitions by performing power, temperature and polarization depended measurements and find the dominant emission band from these dots to occur around 700 nm ( 1.77 eV). A considerable blue-shift of the emission of 27 meV typical for type-II transitions is found by increasing the laser power by 3 orders of magnitude. Temperature resolved data facilitate deconvolution of the broad emission band to contributions of individual transitions.