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Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 28: 2D materials: Chalcogenides I (joint session HL/DS)

HL 28.12: Talk

Wednesday, March 14, 2018, 12:30–12:45, A 151

Persistent photoconductivity in monolayer MoS2 field effect transistors after UV irradiation — •Antony George1, Mikhail Fistul2,3, Uwe Hübner4, Nirul Masurkar5, David Kaiser1, Christof Neumann1, Andreas Winter1, Arava Leela Mohana Reddy5, and Andrey Turchanin11Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743 Jena, Germany — 2Center for Theoretical Physics of Complex Systems, Institute for Basic Science, Daejeon 34051, Republic of Korea — 3Russian Quantum Center, National University of Science and Technology "MISIS", 119049 Moscow, Russia — 4Leibniz Institute of Photonic Technology, 07745 Jena, Germany — 5Department of Mechanical Engineering, Wayne State University, 48202 Detroit, USA

We demonstrate long living photo-excited charge carriers in monolayer MoS2 field effect transistors (FET) after UV irradiation. After irradiation, the FETs were found to be remaining in a high conductivity state at room temperature (RT) for a long time (ca. 30 days). We investigated the origin of the persistent photoconductivity (PPC) combining RT and low-temperature transport measurements with theoretical modeling. At low temperatures, a great enhancement of photo-induced conductivity with applied gate voltage was observed. We ascribe this to the UV irradiation of MoS2, which results in inter-band transitions and the creation of a large number of electron-hole pairs, which are quickly spatially separated due to local variations of the band structure. Under such conditions, the recombination time drastically increases and induces the PPC effect.

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