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HL: Fachverband Halbleiterphysik
HL 45: Organic photovoltaics and electronics
HL 45.6: Talk
Thursday, March 15, 2018, 16:30–16:45, EW 203
Microscopic simulations of doped organic semiconductors and their layers — •Artem Fediai1, Franz Symalla2, and Wolfgang Wenzel1 — 1Karlsruhe Institute of Technology — 2Nanomatch GmbH, Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen
Thermally activated hopping transport in doped organic semiconductors has been studied using the efficient implementation of the kinetic Monte Carlo (KMC) method [1]. We present results for two types of simulation set-ups: (1) a bulk doped material and (2) a single doped layer sandwiched between two metallic electrodes.
For bulk systems, we have particularly investigated how the doping efficiency and the intrinsic energy disorder depend on dopant molar ratio for various energy disorders and offsets between IP of the host material and EA of the acceptor. Besides, the hole mobility in the same parameter space has been investigated.
For a single doped layer sandwiched between two electrodes, we have investigated the dopant molar ratio dependence of the chemical potential of the donated particles in the bulk of a material, and how the injection barrier at a metal/semiconductor interface evolves as the dopant molar ratio increases. Finally, the conductivity of a doped layer has been studied as a function of various parameters.
Our study allows a better understanding of microscopic mechanisms, which changes conductivity and other properties of doped organic semiconductor materials/layers in response to doping.
[1] F. Symalla et.al., Phys. Rev. Lett. 117, 276803.