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Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 46: Quantum dots and wires: Optical properties III

HL 46.3: Talk

Thursday, March 15, 2018, 15:30–15:45, A 151

Exciton dynamics in InAs(Sb)/GaAs submonolayer stacks — •Bastian Herzog1, Fuad Alhussein1, Benjamin Lingnau2, Mirco Kolarczik1, Sophia Helmrich1, David Quandt3, Udo Pohl3, André Strittmatter4, Olaf Brox5, Markus Weyers5, Ulrike Woggon1, Kathy Lüdge2, and Nina Owschimikow11Institut für Optik und atomare Physik, Technische Universität Berlin — 2Institut für theoretische Physik, Technische Universität Berlin — 3Institut für Festkörperphysik, Technische Universität Berlin — 4Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg — 5Ferdinand Braun Institut, Leibniz Institut für Höchstfrequenztechnik Berlin

The deposition of InAs as a submonolayer (SML) superlattice into a GaAs matrix creates an electronic potential landscape with hetero-dimensionally confined charge carriers. While holes are fully trapped inside the In-rich agglomerations, electrons are freely moving within an effective two-dimensional reservoir leading to ultrafast carrier relaxation time scales and a strong coupling of occupation and absorption dynamics. The emission lines of these structures are relatively narrow. Via the doping of antimony (Sb) atoms into these In-agglomerations the emission linewidth is strongly enhanced. In photoluminescence experiments, we show that while the recombination dynamics in the Sb-doped SML stacks is altogether slowed down compared to undoped SMLs, general SML-specific features like lateral mobility of carriers and large amplitude-phase coupling are maintained.

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