Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 55: Quantum dots and wires: Preparation and characterization
HL 55.3: Vortrag
Freitag, 16. März 2018, 10:00–10:15, A 151
Structural characterization of InGaAs/GaP quantum dots grown by MOVPE with varying growth interruptions — •Christopher Prohl1, Andrea Lenz1, Gernot Stracke1, Udo W. Pohl1, André Strittmatter1,2, Dieter Bimberg1, Mario Dähne1, and Holger Eisele1 — 1Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin — 2Otto-von-Guericke Universität Magdeburg, Institut für Exp. Physik, 39106 Magdeburg
The monolithic integration of III-V based nanostructures onto Si is enabled by using GaP, with its particularly low lattice mismatch to Si. InGaAs/GaP quantum dots (QDs) are very promising for novel nanoflash memories. Furthermore, a first light emitting diode grown on a monolithic GaP/Si substrate was already demonstrated.
In this contribution, cross-sectional scanning tunneling microscopy (XSTM) was used to structurally analyze InGaAs/GaP QD layers on the atomic scale, grown by metalorganic vapor-phase epitaxy (MOVPE). As shown previously, the introduction of a GaAs interlayer prior to the InGaAs deposition favors the local concentration of indium and thereby the formation of indium-rich QDs. The growth interruption (GRI) after the In0.5Ga0.5As deposition was varied, influencing the photoluminescence intensity. The XSTM analysis shows that depending on the duration of the GRI a structural redistribution of the QD layer occurs. This is characterized by a strong intermixing of the locally concentrated indium within the layer and leads to the formation of a laterally more homogeneous quaternary InGaAsP layer. This work was supported by the DFG, SFB 787, TP A2 and A4.