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Berlin 2018 – scientific programme

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O: Fachverband Oberflächenphysik

O 27: Graphene: Electronic properties, structure and substrate interaction II (joint session O/TT)

Tuesday, March 13, 2018, 10:30–13:15, MA 043

10:30 O 27.1 Invited Talk: Inside graphene devices — •Clemens Winkelmann, Sayanti Samaddar, Alessandro De Cecco, Hervé Courtois, Indra Yudhistira, Shaffique Adam, Vladimir Prudkovskiy, Claire Berger, and Walt de Heer
11:00 O 27.2 Probing bulk and edge transport channels in sidewall graphene nanoribbons by dual-probe spectroscopy — •Johannes Aprojanz, Stephen Power, Anti-Pekka Jauho, Stephan Roche, and Christoph Tegenkamp
11:15 O 27.3 Polycyclic molecules with geometrical frustration via pyrolysis on a metal — •Alexandre Artaud, Laurence Magaud, Kitti Ratter, Bruno Gilles, Valérie Guisset, Philippe David, Jose I. Martinez, Jose A. Martin-Gago, Claude Chapelier, and Johann Coraux
11:30 O 27.4 Partial dislocations in bilayer graphene — •Reena Gupta, Heiko Weber, and Sam Shallcross
11:45 O 27.5 A topological edge state in the graphene twist bilayer — •Maximilian Fleischmann, Reena Gupta, Dominik Weckbecker, and Sam Shallcross
12:00 O 27.6 Structural study of the graphene/n-Ge(110) interface for nanoelectronic applications — •Julia Tesch, Fabian Paschke, Marko Wietstruk, Stefan Böttcher, Mikhail Fonin, Elena Voloshina, and Yuriy Dedkov
12:15 O 27.7 Landau-level spectroscopy of twisted epitaxial graphene multilayers on a metal substrate — •Sabina Simon, Elena Voloshina, Julia Tesch, Felix Förschner, Vivien Enenkel, Charlotte Herbig, Timo Knispel, Alexander Tries, Jörg Kröger, Yuriy Dedkov, and Mikhail Fonin
12:30 O 27.8 Strong spin-orbit interaction in graphene/WSe2 probed at local scale — •Mikhail Fonin, Felix Förschner, Fabian Paschke, Lena Stoppel, Julia Tesch, Yuriy Dedkov, and Andor Kormányos
12:45 O 27.9 Origin of the band gap in Bi-intercalated graphene on Ir(111) — •Maxim Krivenkov, Dmitry Marchenko, Evangelos Golias, Jaime Sánchez-Barriga, Oliver Rader, and Andrei Varykhalov
13:00 O 27.10 Extremely flat band in bilayer graphene on silicon carbide — •Dmitry Marchenko, Daniil Evtushinsky, Vagelis Golias, Andrei Varykhalov, Thomas Seyller, and Oliver Rader
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