Berlin 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

SYVC: Symposium Voltage Control of Functional Interfaces: Magneto-ionic Meet Memristive Systems

SYVC 1: SYVC: Voltage Control of Functional Interfaces – Magneto-ionic Meet Memristive Systems

SYVC 1.1: Hauptvortrag

Mittwoch, 14. März 2018, 15:00–15:30, H 0105

Magneto-ionic control of interfacial magnetism — •Geoffrey Beach — Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

Voltage control of magnetism has the potential to substantially reduce power consumption in spintronic devices, while offering new functionalities through field-effect operation [1-4]. Magneto-electric coupling has usually been achieved using complex oxides such as ferroelectrics, piezoelectrics, or multiferroic materials. Here I describe a new approach to voltage control of magnetism based on solid-state electrochemical switching of the interfacial oxidation state [2-4] in thin metallic ferromagnets. In ultrathin ferromagnet/oxide bilayers, perpendicular magnetic anisotropy (PMA) arises from interfacial hybridization between the ferromagnetic 3d and oxygen 2p orbitals. By using GdOx as a gate oxide with high oxygen ion mobility, we show that O2- can be reversibly displaced at Co/GdOx [4] interfaces with a small gate voltage, leading to giant changes in magnetic properties [4]. This talk will review recent results in magneto-ionic control of magnetism and give new insights into the electrochemical mechanisms that enable control not only of surface magnetism, but of a wide array of interfacial properties that manifest at metal/oxide interfaces.

[1] U. Bauer, et al., Nano Lett. 12, 1437 (2012) [2] U. Bauer, et al., Appl. Phys. Lett. 100, 192408 (2012) [3] U. Bauer, et al., Nature Nano. 8, 411 (2013) [4] U. Bauer, et al., Nature Mater. 14, 174 (2015)