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Berlin 2018 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 27: Ferroelectric Domain Walls II (joint session KFM/TT)

TT 27.5: Talk

Monday, March 12, 2018, 16:30–16:45, EMH 225

Formation of ferroelectric monoclinic domains in K0.7Na0.3NbO3 thin films under different strain conditions — •Leonard von Helden1, Martin Schmidbauer1, Michael Hanke2, and Jutta Schwarzkopf11Leibniz Institute for Crystal Growth (IKZ), Berlin — 2Paul-Drude-Institute for Solid State Electronics (PDI), Berlin

KxNa1−xNbO3 is a promising material for lead-free ferro- and piezoelectric applications due to its high piezoelectric and coupling coefficients. Moreover, monoclinic phases - which are favorable as they enable a continuous rotation of the polarization vector - can be induced by incorporating anisotropic epitaxial lattice strain in KxNa1−xNbO3 thin films. Upon varying the strain conditions the symmetry and orientation of these monoclinic domains can be deliberately tailored as predicted by strain-phase calculations.[1] In order to confirm the theoretical predictions we present a systematic investigation on the ferroelectric domain formation in K0.7Na0.3NbO3 thin films grown by MOCVD. Slightly different strain conditions were realized by the application of various (110) oriented rare earth scandate substrates. The resulting ferroelectric domain structure was investigated upon a combination of piezoresponse force microscopy and X-ray nano-diffraction. Our results reveal monoclinic MC domains with (001)pc pseudocubic unit cell orientation that differ among the substrates regarding their domain wall inclination. Moreover, the additional occurrence of (100)pc unit cell orientation in films with a thickness above 60 nm will be discussed. [1] J. Schwarzkopf et al., Front. Mater. 4, 26 (2017).

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