Erlangen 2018 – scientific programme
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P: Fachverband Plasmaphysik
P 13: Low Pressure Plasmas - Poster
P 13.11: Poster
Tuesday, March 6, 2018, 16:15–18:15, Redoutensaal
Plasma enhanced chemical vapour deposition and plasma etch challenges for technological fabrication of silicon nitride photonic components — •Erik Lehmann1,2, Harald Richter1, Mirko Fraschke1, Marco Lisker1, Thomas Grabolla1, Lars Zimmermann1,3, and Andreas Mai1,2 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) — 2Technische Hochschule Wildau, Hochschulring 1, 15745 Wildau — 3Technische Universität Berlin, HFT 4, Einsteinufer 25, 10587 Berlin
In the last years silicon nitride (SiN) is demonstrated as a high performance solution for photonic integrated circuits. SiN is emerging as a possible alternative silicon photonics platform with additional features and strength.
The present work is focused on the development of a manufacturing process for silicon nitride waveguides and grating couplers. Experiments have shown plasma enhanced CVD power is significant for high-quality SiN waveguides. An additional polish step was implemented to decrease the surface roughness. The following SiN plasma etch process using a CF chemistry results in waveguides characterized by a rectangular profile with minimal sidewall roughness. The hydrogen concentration in SIN is reduced by a final annealing step. Propagation loss values less than 0.5 dB/cm verify the technological manufacturing process quality.