Aachen 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

T: Fachverband Teilchenphysik

T 51: Halbleiterdetektoren III

T 51.6: Vortrag

Mittwoch, 27. März 2019, 17:15–17:30, H03

Development of a small collection electrode monolithic pixel sensor in a novel 180 nm process for the ATLAS ITk upgrade — •Konstantinos Moustakas1, Ivan Berdalovic2, Christian Bespin1, Ivan Caicedo1, Tomasz Hemperek1, Toko Hirono1, Hans Krüger1, Thanusan Kugathasan2, Cesar Augusto Marin Tobon2, Heinz Pernegger2, Walter Snoeys2, Tianyang Wang1, Sinuo Zhang1, and Norbert Wermes11Physikalisches Institut, University of Bonn, Germany — 2CERN, Geneva, Switzerland

Monolithic pixel sensors are currently in consideration for the outer layers of the ATLAS ITk. Implementations that are based on a small collection electrode are advantageous in terms of power consumption and timing performance but can be sensitive to bulk radiation damage effects. A large-scale demonstrator chip, called TJ-Monopix01 has been developed in a modified 180 nm process that employs an implanted n-layer to achieve full depletion and enhanced radiation tolerance. It consists of 36x40 µ m2 pixels arranged in a 224x448 matrix and features sensor capacitance ≤3 fF, a synchronous “column-drain” readout architecture and total power consumption of 120 mW/cm2. Laboratory measurements demonstrate the high signal to noise ratio by means of ENC≈10 e and fast timing response. These promising results encouraged the ongoing design of TJ-Monopix02, which addresses the challenges of a full-scale matrix (2xcm2) and will include further optimization of the process modification and improvements in the front end and pixel design to withstand radiation dose up to 1·1015 neq/cm2 towards an ATLAS ITk compatible monolithic sensor.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2019 > Aachen