Regensburg 2019 – wissenschaftliches Programm
DS 19: Focus Session: Direct-Write Nanofabrication and Applications II
(Electron Beam Induced Processing) (joint session DS/TT)
DS 19.2: Vortrag
Mittwoch, 3. April 2019, 15:30–15:45, H32
Avoiding amorphization in silicon nano structures — •Gregor Hlawacek1, Xiaomo Xu1,2, Hans-Jürgen Engelmann1, Karl-Heinz Heinig1, Wolfhard Möller1, Ahmed Gharbi3, Raluca Tiron3, Lothar Bischoff1, Thomas Prüfer1, Rene Hübner1, Stefan Facsko1, and Johannes von Borany1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2Faculty of Physics, Technische Universität Dresden, Dresden, Germany — 3CEA-Leti, Grenoble, France
The usage of ion beam irradiation on vertical nanopillar structures is a prerequisite for fabricating a vertical GAA-SET device. After room temperature irradiation (2×1016 ions/cm2) of nanopillars (with a diameter of 35 nm-50 nm and a height of 70 nm) with either 50 keV broad beam Si+ or 25 keV focused Ne+ from a helium ion microscope (HIM), strong plastic deformation has been observed which hinders further device integration. This differs from predictions made by Monte-Carlo based simulations using the program TRI3DYN. To avoid this, ion irradiation at elevated temperatures (up to 672 K) has been performed and no plastic deformation was observed under these conditions. Additionally a pillar diameter reduction by 50% can ab achieved in this way without changing the shape of the pillar.
This work is supported by the European Union’s H-2020 research project IONS4SET under Grant Agreement No. 688072.