Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 24: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part I
DS 24.9: Vortrag
Donnerstag, 4. April 2019, 17:15–17:30, H39
GeTe(111) ferroelectric and (GeMn)Te multiferroic Rashba semiconductor: a novel paradigm for spintronic applications — Juraj Krempasky1, Hugo Dil2, Gunther Springholz3, Jan Minar4, and •Matthias Muntwiler1 — 1Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland — 2Institute of Physics, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne, Switzerland — 3Institut für Halbleiter-und Festkörperphysik, Johannes Kepler Universität, A-4040 Linz, Austria — 4New Technologies-Research Center University of West Bohemia, Pilsen, Czech Republic
The control of the electron spin in functional materials by an external electric field is a key issue for spintronic devices. Because the spin is not directly influenced by a realistic electric field, the coupling has to be indirect and thus especially ferroelectric and multiferroic materials bear large promise. In this respect a novel class of multiferroic materials based on ferroelectric GeTe(111) enabled to combine ferroelectric order with Rashba type switching of spin textures.The system thus constitutes an intriguing route for non-volatile and static electrical control of the spin degrees of freedom. Based on photoemission studies in spin and momentum-resolved ways, combined with x-ray photoelectron-diffraction experiments, we found that besides ferroelastic and depolarization effects, a depth of six atomic layers below the GeTe surface significantly deviates from the expected truncated bulk structure. In this context the limitations of the electric control of the Rashba states are discussed.