Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.12: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Enhanced Photoluminescence from Monolayer WS2 Excitons with a 2D-material-air-GaP in-plane Microcavity — Oliver Mey1, Franziska Wall1, •Lorenz Maximilian Schneider1, Frederik Walla2, Amin Soltani2, Hartmut G. Roskos2, Ni Yao3, Peng Quing3, Wei Fang3, and Arash Rahimi-Iman1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2Physikalisches Institut, Goethe-Universität, D-60438 Frankfurt am Main, Germany — 3State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
To improve light-matter interaction with two-dimensional semiconductors for future applications involving monolayer materials in waveguide-coupled on-chip integrated circuitry and valleytronic nanophotonics, we study the effects of tailoring the landscape on which the monolayers are placed. In this context, photoluminescence enhancement from monolayer WS2 on GaP substrates patterned by focused-ion-beam etching was investigated. Here, we present a unique optical microcavity approach, which results in a WS2 photoluminescence enhancement by a factor of 10 at room temperature compared to the unstructured substrate. Here, we combine a bulls-eye-shaped circular Bragg grating, for interference effects in the horizontal direction, and an optimized etching depth of circular air-GaP structures, for maximum constructive interference effects of the applied pump and expected emission light in the vertical direction.