Regensburg 2019 – wissenschaftliches Programm
KFM 14.15: Poster
Mittwoch, 3. April 2019, 16:00–18:30, Poster C
Resistive switching of La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3/Pt heterostructures — •Tino Band1, Diana Rata1, Robert Roth1, Stefan G. Ebbinghaus2, and Kathrin Dörr1 — 1Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3, 06099 Halle, Germany — 2Institute of Chemistry, Martin Luther University Halle-Wittenberg, Kurt-Mothes-Straße 2, 06099 Halle, Germany
Electric fields in the order of 1-10 MV cm−1 are often applied at thin ferroelectric films to study electron tunneling through a barrier. An electric field of this magnitude can drive processes which are of electrochemical nature and change the chemical composition in or near the tunnel barrier. Until now, ferroelectric PbZrxTi1−xO3 (PZT, x=0-0.5) has rarely been studied with respect to ionic-driven resistive switching. We present results on PZT films (x=0.2) grown on La0.7Sr0.3MnO3/SrTiO3(001) showing resistive switching like SrTiO3. We have confirmed this for 3 nm thick PZT in nanoscale force microscopy measurements of current-voltage loops at fixed tip positions with subsequent detection of topographic changes. This experimental approach allows one to correlate ionic processes with the features of current-voltage characteristics. As second example, current-voltage characteristics of 10 nm thick PZT with 40×40 µm2 Pt top electrodes have been studied. Both types of measurements reveal resistive switching driven by ionic motion in large electric fields.