Regensburg 2019 – scientific programme

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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 14: Postersession KFM

KFM 14.15: Poster

Wednesday, April 3, 2019, 16:00–18:30, Poster C

Resistive switching of La_0.7Sr_0.3MnO₃/PbZr_0.2Ti_0.8O₃/Pt heterostructures — •Tino Band¹, Diana Rata¹, Robert Roth¹, Stefan G. Ebbinghaus², and Kathrin Dörr¹ — ¹Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3, 06099 Halle, Germany — ²Institute of Chemistry, Martin Luther University Halle-Wittenberg, Kurt-Mothes-Straße 2, 06099 Halle, Germany

Electric fields in the order of 1-10 MV cm⁻¹ are often applied at thin ferroelectric films to study electron tunneling through a barrier. An electric field of this magnitude can drive processes which are of electrochemical nature and change the chemical composition in or near the tunnel barrier. Until now, ferroelectric PbZr_xTi_1−xO₃ (PZT, x=0-0.5) has rarely been studied with respect to ionic-driven resistive switching. We present results on PZT films (x=0.2) grown on La_0.7Sr_0.3MnO₃/SrTiO₃(001) showing resistive switching like SrTiO₃. We have confirmed this for 3 nm thick PZT in nanoscale force microscopy measurements of current-voltage loops at fixed tip positions with subsequent detection of topographic changes. This experimental approach allows one to correlate ionic processes with the features of current-voltage characteristics. As second example, current-voltage characteristics of 10 nm thick PZT with 40×40 µm² Pt top electrodes have been studied. Both types of measurements reveal resistive switching driven by ionic motion in large electric fields.