Regensburg 2019 – wissenschaftliches Programm
KFM 14.29: Poster
Mittwoch, 3. April 2019, 16:00–18:30, Poster C
Micro-lenses in silicon carbide — •Fiammetta Sardi, Roman Kolesiov, Ferdinand Schiller, and Jörg Wrachtrup — 3. Institute of Physics, Stuttgart, Germany
Silicon carbide(SiC) is an appealing material due to its properties in the applications of quantum technologies. Its wide-band gap and highly developed fabrication techniques show great potential as a resource in quantum technology evolution.
Silicon Vacancy Defects hosted in the crystalline structure of SiC exhibit a long relaxation time at room temperature and a manageable coherence control on a single spin. Nevertheless, the high refractive index of the material leads to strong refraction and total internal reflection ending in deviation of the defects* photoluminescence at SiC- air interface.
A possibility to decrease this effect is the fabrication of shallow Solid immersion lenses (SIL) of a few micrometres in size on a SiC wafer, resulting in refractionless transmission of light along the SIL surface. Defects are supposed to be placed in the centre of the SIL for maximum enhancement of collected photoluminescence .
In this work, a scalable method for the fabrication for SILs in SIC is presented, using photo-lithography and reaction ion etching(RIE) to transfer SILs from the photoresist to SiC. For lenses with an NA=0.7, enhancements higher than 2.5 in the photoluminescence of defects has been achieved.