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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 14: Postersession KFM

KFM 14.31: Poster

Mittwoch, 3. April 2019, 16:00–18:30, Poster C

Mask-less, high aspect ratio, high resolution electron-beam-induced etching of diamond — •Vasilis Dergianlis, Martin Geller, Dennis Oing, Nicolas Wöhrl, and Axel Lorke — Faculty of Physics and CENIDE, University of Duisburg-Essen, Germany

Diamond has attracted significant attention as a promising material for a broad range of emerging applications, such as host material for NV-centers in future quantum information technologies [1], or as ultrasensitive nano-sensors [2]. Structuring this extremely stable material is, however, highly challenging. First attempts have shown the possibility to use water vapor in combination with an electron beam [3], however only with a strong anisotropy of the etching process and a low-resolution in the µm-range.

In this contribution, we report on high-resolution etching of undoped, hydrogen-terminated, single crystalline diamond layers of <100> orientation without anisotropy in the etching process. We used a Scanning Electron Microscope (SEM) in a dual beam Focused Ion Beam (FIB) together with water vapor, which was injected directly onto the sample surface. Using this versatile and non-invasive technique, trenches with widths of only 10 nm were precisely etched into the diamond sample. Our results show the possibility of high-resolution mask- and resistless patterning of diamond for nano-optical and electronic applications.
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