Regensburg 2019 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Magnetism Poster A

MA 15.66: Poster

Tuesday, April 2, 2019, 10:00–13:00, Poster E

MBE growth of Sr(Mn,As)2 — •Martin Brajer^{1, 2} and Vít Novák¹ — ¹Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha, Czech Republic — ²Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague, Czech Republic

We report on growth of antiferromacnetic (AF) semiconductor by means of molecular beam epitaxy: trigonal Sr(Mn,As)2, extending the I-Mn-V family of room-temperature AFs. It has broken inversion symmetry, allowing for current-induced switching of AF moments. It can be successfully grown on lattice-matched zinc-blende semiconductor substrate, (111)InAs, which allows for a stable 2D growth, but hinders its basic transport characterization because of the high substrate conductivity. We study growth, crystal quality and surface morphology of the material depending on the growth parameters.