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Regensburg 2019 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Magnetism Poster A

MA 15.82: Poster

Tuesday, April 2, 2019, 10:00–13:00, Poster E

Investigation of tunneling anisotropic magnetoresistance (TAMR) in fully epitaxial oxide stacks — •Kevin Lancaster1, Camillo Ballani1, Christoph Hauser1, Philip Trempler1, and Georg Schmidt1,21Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle (Saale), Germany — 2Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg 06120 Halle (Saale), Germany

Tunneling anisotropic magnetoresistance (TAMR) [1] can appear in stacks with a single crystalline ferromagnetic electrode, a tunnel barrier and a non-magnetic counter electrode. Especially for fully epitaxial stacks an increase in magnetoresistance is expected because of increased k-parallel conservation. More complex effects may appear when a ferroelectric tunnel barrier is used. We present an optimization for the thin film pulsed laser deposition of SrTiO3 and BaTiO3 tunnel barriers on La0,7Sr0,3MnO3 for (001)-oriented SrTiO3 substrates. After deposition the layer stacks were processed by means of lithography, etching and electron beam evaporation. Besides structural characterization we will present magnetotransport measurements done at low temperatures in a cryostat equipped with a 3D vector magnet.

[1] C. Gould, C. Ruester, G. Schmidt, L. Molenkamp: "Tunnelling Anisotropic MagnetoResistance (TAMR)", INTERMAG 2006 - IEEE International Magnetics Conference 4261550 (2006), 116

[2] J. D. Burton, Evgeny Y. Tsymbal: "Tunneling anisotropic magnetoresistance in a magnetic tunnel junction with half-metallic electrodes", Physical Review B93, 024419, 2016

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