Regensburg 2019 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 12: Poster session I
MM 12.37: Poster
Montag, 1. April 2019, 19:15–20:45, Poster C
Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions — •Botond Sánta1,2, Zoltán Balogh1,2, Ágnes Gubicza1,3, László Pósa1,4, Dávid Krisztián1, György Mihály1,2, Miklós Csontos1,3, and András Halbritter1,2 — 1Department of Physics, Budapest University of Technology and Economics, Budapest, Hungary — 2MTA-BME Condensed Matter Research Group, Budapest, Hungary — 3Empa, Swiss Federal Laboratories for Materials Science and Technology, Transport at Nanoscale Interfaces Laboratory, Dübendorf, Switzerland — 4Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, Budapest, Hungary
The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated. The analysis of the low-frequency current noise spectra revealed that the main electronic noise contribution arises from the resistance fluctuations due to internal dynamical defects of the Ag nanofilaments. The resulting 0.01-1% current noise ratio is found to be universal: it only depends on the total resistance of the device, irrespectively of the material aspects of the surrounding solid electrolyte as well as of the specific filament formation procedure. Moreover, the resistance dependence of the current noise ratio also displays the diffusive to ballistic crossover, confirming that stable resistive switching operation utilizing Ag nanofilaments is not compromised even in truly atomic scale junctions by technologically impeding noise levels.