Regensburg 2019 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 15: Topical session (Symposium MM): Correlative and in-situ Microscopy in Materials Research
MM 15.6: Vortrag
Dienstag, 2. April 2019, 12:30–12:45, H44
Dislocations in Cu(In,Ga)Se2 solar cell absorbers: Insights from electron microscopy and electronic structure calculations — Daniel Barragan-Yani1, Ekin Simsek Sanli2, and •Karsten Albe1 — 1TU Darmstadt, FB 11, FG Materialmodellierung, Otto-Berndt-Str. 3, 64287 Darmstadt — 2Max Planck Institute for Solid State Research, Stuttgart Center for Electron Microscopy, Heisenbergstrasse 1, 70569 Stuttgart
In Cu(In,Ga)Se2 (CIGSe) based devices, power-conversion efficiencies of more than 15 % can be achieved, although significant dislocation densities are present. This still unexplained behavior is in contrast to what has been reported for other semiconductor materials, where the presence of dislocations strongly affects the electrical properties. This implies that lattice dislocations in CIGSe-based absorbers are per se electrically inactive or possibly passivated by solute or impurity atoms. In this contribution, calculations based on density functional theory are presented. which reveal the influence of chemical reconstruction and solute segregation on the activity of mixed and partial dislocations in CIGGe. The role of mechanical driving forces for point defect dislocation interaction is highlighted, which allows to explain results obtained from by aberration-corrected scanning transmission electron microscopy in combination with electron energy-loss spectroscopy.