Regensburg 2019 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 29: Nanostructures at Surfaces III: Dots, Particles, and Clusters

O 29.1: Vortrag

Dienstag, 2. April 2019, 10:30–10:45, H25

Negative differential resistance in the electron-transport through cuprous oxide thin films — •Alexander Gloystein and Niklas Nilius — Institute of Physics, Carl von Ossietzky University, 26111 Oldenburg, Germany

Copper nano-islands grown on Cu2O(111) thin films have been investigated by scanning tunneling microscopy and spectroscopy. The latter reveals pronounced lateral quantization effects in the Cu 4sp states, reflecting the finite island size. Below the onset of the quantized states, a wide region of negative differential resistance (NDR) opens up in the tunneling spectra. The effect is explained with the development of p-type conductance in the Cu2O films below the ad-copper, which promotes electron transport at small negative bias but leads to a sudden closure of transport channels below a critical bias of -1.0 V. The resulting NDR effect exhibits an on/off current that is larger than in common molecular junctions and might qualify this inorganic system for applications.