Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 80: Ultrafast Electron Dynamics at Surfaces and Interfaces I
O 80.6: Vortrag
Donnerstag, 4. April 2019, 11:45–12:00, H16
Atomically-resolved ultrafast dynamics in CDW-Mott-insulator materials — •Shaoxiang Sheng1, Mohamad Abdo1,2,3, Moritz Tritschler1, Luigi Malavolti1,2,3, Max Hänze1,2,3, Gregory McMurtrie1,2,3, Lukas Arnhold1, and Sebastian Loth1,2,3 — 1Universität Stuttgart, Institut für Funktionelle Materie und Quantentechnologien, Stuttgart, Germany — 2Max-Planck-Institut für Struktur und Dynamik der Materie, Hamburg, Germany — 3Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
Electron-electron interaction plays an important role in strongly correlated systems. This may drive the electrons near the Fermi surface to localize resulting in a metal-to-insulator transition. Layered 1T-TaS2, as a model system, presents rich electronic properties, which go through a series of charge-density wave (CDW) phases into a Mott insulating ground state as the temperature decreases.[1] By combining THz pump-probe spectroscopy and low-temperature scanning tunneling microscopy (STM), we can study ultrafast electron dynamics of the Mott phase at the atomic scale. The pump-probe spectra vary strongly on the scale of one unit cell of the CDW. The results shed new light onto the microscopic dynamics of electron motion in the Mott phase.
[1] Sipos, B., et al. Nature Materials 7, 960-965 (2008).