Regensburg 2019 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 14: Graphene
TT 14.2: Vortrag
Montag, 1. April 2019, 15:15–15:30, H22
Spin and Charge Transport in Doped Graphene — •Marie-Luise Braatz1,2, Axel Binder3, and Mathias Kläui1,2 — 1Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany — 2Graduate School of Excellence Materials Science in Mainz (MAINZ), 55128 Mainz, Germany — 3BASF SE, 67056 Ludwigshafen, Germany
Graphene in its pristine form is already a remarkable material, however it has certain shortcomings in its pure form, such as no sizeable bandgap. Materials modifications allow one to better tailor its properties to specific needs such as engineering the charge carrier density or the bandgap, which is often required for electronic applications. We use chemical doping to gradually modify the graphene lattice, which has been shown to have an effect on the electronic structure [1]. Heteroatom substitution with nitrogen leads to changes in the structure as well as the electronic and magnetotransport properties. The amount of dopants is systematically varied so different dopant concentrations can be compared. The samples are then analyzed by Raman and electron microscopy to elucidate the changes in structure. Measuring the magnetoresistance at various temperatures and fields allows us to correlate the structure to the charge transport properties [2].
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M. Rein et al., ACS Nano 9, 1360 (2015)