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Regensburg 2019 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 17: Poster Session: Correlated Electrons 1

TT 17.28: Poster

Monday, April 1, 2019, 15:00–18:30, Poster D

Two-dimensional electron gas at the KTaO3 surface and KTaO3/EuO interface — •Xue-Jing Zhang1 and Bang-Gui Liu21Institute for Advanced Simulation, Forschungszentrum Jülich, D-52425 Jülich, Germany — 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Since the discovery of a two-dimensional (2D) electron gas at the LaAlO3/SrTiO3 interface, 2D carrier gases at such oxide interfaces and surfaces have attracted great attention because they can host many important phenomena and may produce novel functional devices. Here, we show through first-principles investigations that the surface 2D electron and hole gases in a KTaO3 (KTO) thin film can be tuned by applying biaxial stress. When increasing compressive in-plane strain, the 2D carrier concentrations decrease down to zero and then a new pair of surface 2D electron and hole gases appears in which the carrier types are switched to the opposite ones. Our analysis indicates that this carrier-type switching occurs because the increasing compressive strain reverses the slope of monolayer-resolved electrostatic potential along the [001] direction. In addition, through first-principles investigations, we also study the KTO/EuO interfaces with oxygen vacancies in the KTO unit cell adjacent to EuO. We find that through interlayer exchange of the Eu-5d and Ta-5d, EuO drives the neighboring TaO2 layer into a ferromagnetic state. These phenomena should be useful to design novel functional devices.

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