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Regensburg 2019 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 17: Poster Session: Correlated Electrons 1

TT 17.6: Poster

Monday, April 1, 2019, 15:00–18:30, Poster D

Crystal growth of the valence fluctuating system EuPd2Si2 — •Marius Peters, Eunhyung Cho, Doan-My Tran, Franz Ritter, Kristin Kliemt, and Cornelius Krellner — Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt/Main, Germany

The study of collective phenomena raising from enhanced coupling between electrons and phonons is focussed on materials exhibiting phase transitions involving both electronic and lattice-degrees of freedom. One system providing such a strongly coupled phase transition is EuPd2Si2 of the ThCr2Si2 structural type, showing a temperature induced valence transition of europium between the energetically vicinal valence states Eu2+ and Eu3+ at about 170K [1]. First reports on the synthesis of single crystals came up only recently [2], but a deep investigation of the valence transition in this compound is still missing. We approached the ternary Eu-Pd-Si system using differential thermal analysis to map the local composition phase diagram. We used the Bridgman and the Czochralski method fort he successful growth of mm-sized single crystals of EuPd2Si2. In this contribution we will present chemical and structural characterization of these crystals and some preliminary physical measurements around the valence transition.
E. V. Sampathkumaran et al., J. Phys. C14, L237 (1981)
Y. Onuki et al., Philosophical Magazine 97, 3399 (2017)

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