DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2019 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

TT: Fachverband Tiefe Temperaturen

TT 3: Topological Insulators (joint session TT/MA)

TT 3.8: Talk

Monday, April 1, 2019, 11:30–11:45, Theater

VLS-Growth and characterization of bulk-insulating topological insulator nanowires — •Felix Münning1, Oliver Breunig1, Zhiwei Wang1, Mengmeng Bai1, Stefan Roitsch2, Klaus Meerholz2, Thomas Fischer3, Sanjay Mathur3, and Yoichi Ando11Physics Institute II, University of Cologne — 2Institute of Physical Chemistry, University of Cologne — 3Institute of Inorganic Chemistry, University of Cologne, Germany

We report on the growth of Bi2TexSe3−x and BixSb2−xTe3 nanowires and their characterization in terms of morphology, material composition and electronic transport at low temperatures. Growth is performed using the vapour-liquid-solid (VLS) method on Si/SiO2 substrates decorated with 20-nm Au nanoparticles. Growth parameters such as temperature distribution, mass and ratio of source materials, inert gas flow, pressure and growth time are optimized and the results are examined using scanning and transmission electron microscopy (SEM, TEM) and electron dispersive X-ray spectroscopy (EDX). Devices featuring ohmic contacts to the nanowires are fabricated using electron-beam lithography. Subsequently, the electronic transport properties of the nanowires are measured for their dependencies on temperature, magnetic field and electrostatic gating at temperatures down to 1.7 K.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2019 > Regensburg