Regensburg 2019 – wissenschaftliches Programm
TT 46.14: Vortrag
Mittwoch, 3. April 2019, 18:30–18:45, H22
Coexistence of superconductivity and quantum Hall states in InSb Nanosheets — •Ning Kang — Department of Electronics, Peking University, China
Hybrid superconducting devices based on high-mobility two-dimensional electron gases with strong spin-orbit coupling are considered to offer a flexible and scalable platform for topological quantum computation. Here, we report the realization and electrical characterization of hybrid devices based on high-quality InSb nanosheets and superconducting Nb electrodes. The high critical magnetic field of Nb combined with high-mobility InSb nanosheets allows us to exploit the transport properties in the exotic regime where the superconducting proximity effect coexists with quantum Hall effect. Transport spectroscopy measurements in such a regime reveal an enhancement of the conductance at the quantum Hall plateaus, accompanied by a pronounced zero-bias peak in the differential conductance. We discuss that these features originate from the formation of Andreev edge states at the superconductor-InSb nanosheet interface in the quantum Hall regime.