Bonn 2020 – scientific programme
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T: Fachverband Teilchenphysik
T 72: Semiconductor detectors
T 72.2: Talk
Thursday, April 2, 2020, 16:45–17:00, H-HS IX
TPA-TCT -- Two Photon Absorption - Transient Current Technique — •Moritz Wiehe1,2, Marcos Fernandez Garcia1,5, Isidre Mateu1, Michael Moll1, Raúl Montero Santos3, Rogelio Palomo Pinto4, and Ivan Vila Alvarez5 — 1CERN — 2Universität Freiburg — 3Universidad del Pais Vasco (UPV-EHU) — 4Universidad de Sevilla (US) — 5Instituto de Fisica de Cantabria (CSIC-UC)
The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon devices with unprecedented spatial resolution. Currently the first compact TPA-TCT setup is under development at CERN. The current status of the setup and first measurements are presented.