Bonn 2020 – scientific programme

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T: Fachverband Teilchenphysik

T 82: Pixel detectors IV

T 82.4: Talk

Thursday, April 2, 2020, 17:15–17:30, L-2.004

Radiation hardness of a large electrode DMAPS design in a 150 nm CMOS process — •Ivan Caicedo, Christian Bespin, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Piotr Rymaszewski, Tianyang Wang, and Norbert Wermes — Physikalisches Institut, Universität Bonn. Bonn, Germany.

Monolithic CMOS active pixel sensors in depleted substrates (DMAPS) are an attractive development for pixel tracker systems in high-rate collider experiments. The radiation tolerance of these devices is enhanced through technology add-ons and careful design, which allow them to be biased with large voltages and collect charge through drift in highly resistive silicon bulks. In addition, the use of monolithic chips in commercial CMOS processes would reduce the current production complexity and costs of large module areas.

LF-Monopix1 is the first DMAPS with a fully functional column-drain read-out architecture. It was designed in a 150 nm CMOS process that made it possible to place and isolate each pixel’s front-end circuitry within a charge collection electrode of a size comparable to the pixel area. This presentation will give an overview of the chip performance and then focus on its radiation hardness. Measurements on irradiated samples showed a detection efficiency of ∼99% after a NIEL dose of 1×10¹⁵ n_eq /cm². Moreover, their gain did not degrade and their noise increased by 25% after a TID dose of 100 MRad from X-rays. In both cases, the chips remained operational and within reasonable values of leakage current and power consumption.