Dresden 2020 – wissenschaftliches Programm
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AKPIK: Arbeitskreis Physik, moderne Informationstechnologie und Künstliche Intelligenz
AKPIK 1: AKPIK Talks
AKPIK 1.1: Vortrag
Montag, 16. März 2020, 16:45–17:00, HSZ 301
Insights of a statistical analysis of Cu/SiO2/W devices for memory applications — •Florian Maudet1, Veeresh Deshpande1, Hanno Kröncke1, and Catherine Dubourdieu1,2 — 1Institute Functional Oxides for Energy-Efficient Information Technology (EM-IFOX), Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany — 2Freie Universitat Berlin, Physical Chemistry, Arnimallee 22, 14195 Berlin Germany
Resistance switching memories are promising candidates for low power consumption non-volatile memory applications owing to their dimensional scalability and fast switching speed. Among the proposed systems, Cu/SiO2 based memory devices have demonstrated very promising performances and allow easy integration with CMOS technology. In such systems the different states originate from the formation of a Cu filament in the SiO2 solid electrolyte. Because of this, the devices are very sensitive to local inhomogeneities like defects in the SiO2 dielectric or interface roughness. As a result, the on/off resistance and the set/reset voltage can have significant device-to-device variations limiting their advantages for potential applications. In order to quantify and understand the origin of the distribution of these characteristics we present a broad statistical analysis of Cu/SiO2/W memory behavior. The influence of different voltage sweep rates and device areas are investigated. This study allows identification of key parameters that can be optimized to reduce variance between samples.