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Dresden 2020 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Thin Film Applications I

DS 3.3: Vortrag

Montag, 16. März 2020, 10:00–10:15, CHE 91

Simulation of resistive switching in HfOx based RRAM and the role of low temperature tetragonal and hexagonal hafnia phases in conductive switching — •Nico Kaiser1, Stefan Petzold1, Enrique Miranda2, Alexander Zintler1, Leopoldo Molina-Luna1, and Lambert Alff11Institute of Materials Science, Technische Universität Darmstadt, Germany — 2Departament d Enginyeria Electrònica, Universitat Autònoma de Barcelona, Spain

HfOx is a promising candidate for the functional layer in Resistive Random Access Memory (RRAM) with the potential to replace conventional FLASH memory and being implemented in emerging technologies such as neuromorphics or in-memory computing. Although resistive switching was intensively investigated in recent years, the exact mechanism and the role of oxygen vacancies is not completely understood and highly debated. In this study, we developed an electrical conduction model utilizing two antiserially connected memdiodes (diodes with memory). In this way, all switching modes observed in stoichiometric monoclinic (m-HfO2) and oxygen-vacancy-stabilized low-temperature tetragonal (LTP t-HfOx) phase can be simulated. The separation of conduction characteristics via memdiodes allows to evaluate the role of both electrode-oxide interfaces separately. Through experimental thin film characterization methods such as XRD, XPS and electrical measurements, we investigate the physical properties of HfOx phases. Using TEM, we identify HfOx structures and their fingerprints in EELS which can be used to identify the role of LTP t-HfOx and hcp-HfOx in the switching process.

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