SKM 2021 – wissenschaftliches Programm
CPP 11.2: Vortrag
Donnerstag, 30. September 2021, 15:30–15:45, H5
tailored electrical characteristics in TiOx/HfOx-based memristive device for targeting neuromorphic computing — •Seongae Park1,2, Stefan Klett1, Tzvetan Ivanov1,2, Andrea Knauer2, Joachim Doell2, and Martin Ziegler1,2 — 1Department of Electrical Engineering and Information Technology, TU Ilmenau, Ilmenau, Germany — 2Institute of Micro and Nanotechnologies MacroNano, TU Ilmenau, Ilmenau, Germany
Over the last few years, memristive devices have shown their high potential for neuromorphic computing. In particular, redox-based memristive devices have become the focus of research interest, since they enable precise emulation of synaptic functionality through local ionic processes. However, for targeted device functionality, a detailed understanding of ionic processes at the atomic level is required, which is often severely hampered by coupled electronic and ionic processes. In this talk, the bi-layer oxide system TiOx/HfOx is presented. In a combined approach using a 4-inch wafer process technology and a physical device model, we show the contribution of physical device parameters such as device area size, the thickness of HfOx, interface modification, as well as the stoichiometry of HfOx to the electrical characteristics. Furthermore, we present how those parameters can be tuned for customized device functionalities. In that respect, memristive devices with tailored I-V characteristics and analog resistive switching are obtained that own an intrinsic self-compliance and do not need electroforming-free cycles.