SKM 2021 – wissenschaftliches Programm
CPP 8.16: Poster
Mittwoch, 29. September 2021, 17:30–19:30, P
PbS quantum dot solar cells with a IZO buffer layer at quantum dot/ZnO interface — •Huaying Zhong1, Wei Chen1,2, and Peter Müller-Buschbaum1,3 — 1Technische Universität München, Physik-Department, Lehrstuhl für Funktionelle Materialien, James-Franck-Str. 1, 85748 Garching, Germany — 2Southern University of Science and Technology (SUSTech), Department of Electrical and Electronic Engineering, 1088 Xueyuan Avenue, 518055 Shenzhen, P.R. China — 3Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München, Lichtenbergstr. 1, 85748 Garching, Germany
Colloidal quantum dots (CQDs) have generated great interest in various optoelectronic devices because of their size-tunable bandgap, low-temperature solution processability. Lead sulfide (PbS) CQDs, with a strong absorption coefficient and large Bohr radius, enable solar cells to harvest infrared photons of the solar spectrum beyond the absorption edge of crystalline silicon and perovskites. There have been many strategies to improve device performance, among which interface engineering is a promising method. Excellent interface engineering is designed to form an energy cascade to enable an efficient charge transfer and promote exciton dissociation. Moreover, it can also offer good interfacial contact and improve device air stability by selecting appropriate materials. Here, we sputter the indium zinc oxide (IZO) as the interlayer between PbS QDs absorption layer and ZnO nanoparticle (NP) electron transport layer(ETL), to fabricate PbS QD solar cells and study the trap densities and charge transport process at QDs interfaces.