SKM 2021 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 9: Focus Session: Highlights of Materials Science and Applied Physics II (joint session DS/HL)
DS 9.4: Vortrag
Freitag, 1. Oktober 2021, 10:45–11:00, H1
Investigation of Spin Pumping through α-Sn Interlayer — •Leszek Gladczuk1, Lukasz Gladczuik2, Piotr Dluzewski1, Gerrit van der Laan3, and Thorsten Hesjedal2 — 1Institute of Physics, Polish Academy of Science — 2Department of Physics, Clarendon Laboratory, University of Oxford — 3Diamond Light Source, Harwell Science and Innovation Campus
Elemental tin in the α-phase is an intriguing member of the family of topological quantum materials. In thin films, with decreasing thickness, α-Sn transforms from a 3D topological Dirac semimetal (TDS) to a 2D topological insulator (TI). Getting access to and making use of its topological surface states is challenging and requires interfacing to a magnetically ordered material. Recently we have successfully performed an epitaxial growth of α-Sn thin films on Co, forming the core of a spin-valve structure, is reported. Time- and element-selective ferromagnetic resonance experiments were conducted to investigate the presence of spin pumping through the spin-valve structure. A rigorous statistical analysis of the experimental data using a model based on the Landau-Lifshitz-Gilbert-Slonczewski equation was applied. A strong exchange coupling contribution was found, however no unambiguous proof for spin pumping. Nevertheless, the incorporation of α-Sn into a spin valve remains a promising approach given its simplicity as an elemental TI and its room-temperature application potential.