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O: Fachverband Oberflächenphysik

O 105: Poster Session VIII: Graphene and beyond II

O 105.1: Poster

Thursday, March 4, 2021, 13:30–15:30, P

Low-energy ion implantation of Cobalt in graphene investigated by scanning tunneling microscopy — •Anna Sinterhauf1, Benno Harling1, Manuel Auge2, Felix Junge2, Philip Willke3, Hans Hofsäss2, and Martin Wenderoth11IV. Physikalisches Institut, Universität Göttingen — 2II. Physikalisches Institut, Universität Göttingen — 3Physikalisches Institut, Karlsruher Institut für Technologie (KIT)

To tailor the properties of a graphene sheet by band structure engineering, the issue of doping is decisive to turn graphene into a true device material. For this purpose, a direct incorporation of foreign atoms into the graphene layer by low-energy ion beam implantation has shown to be a versatile method [1] as demonstrated for B and N. Here, we report on the successful implantation of Cobalt atoms into the graphene lattice achieved by low-energy Cobalt implantation at an ion energy of  20eV. After transfer through air, reinsertion into UHV and annealing at 400C for 30 minutes, the structural and electronic properties of the ion implanted epitaxial graphene are investigated by scanning tunneling microscopy and spectroscopy (STS). Contrary to B and N [2], we find a negligible charge transfer from Co to graphene in agreement with theoretical considerations [2]. In addition, at the topographic position of the defects, STS reveals a pronounced peak in dI/dV-spectra at zero bias voltage. Financial support by the DFG through project We 1889/13-1 is gratefully acknowledged.
[1] P. Willke et al., Nano Lett. 15(8), 5110-5115, 2015
[2] E. J. G. Santos et al., Phys. Rev. B 81, 125433, 2010

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