SurfaceScience21 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 21: Poster Session II: Solid-liquid interfaces: Reactions and electrochemistry I
O 21.3: Poster
Montag, 1. März 2021, 13:30–15:30, P
Cooperative Effect of Carbonaceous Material with Water Enhances the Growth of SiOx on Si — •Rémi Dupuy1, Clemens Richter1, Pip CJ Clark2, Rossella Yivlialin2, Michael J Sear2, Marco Favaro2, Robert Schlögl1, David E Starr2, and Hendrik Bluhm1 — 1Fritz Haber Institute of the Max Planck Society, D-14195 Berlin, Germany — 2Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany
We have investigated the influence of carbonaceous materials on the growth of SiOx layers on Si under dry conditions and in the presence of water and/or water vapor. Dip-and-pull experiments were carried out using the SpAnTeX endstation using tender X-rays (3 keV) from the KMC-1 beamline at BESSY II. Si wafers (n-doped) cleaned using the RCA-method exhibited initially a uniform SiOx film thickness of the order of 1 nm, as determined from Si 2p and Si 1s spectra.
In the dip-and-pull experiments the Si wafers were partly immersed into pure water or octanoic acid, as well as mixtures of water and stearic or octanoic acid. The XPS data clearly show a correlation between the thickness of the SiOx layer and the amount of carbon present at the surface. However, this effect is only observed in experiments where the Si wafer was exposed to both water and carbonaceous species. Oxide growth was not observed for experimental conditions where the SiOx/Si surface was exposed to only either water or carbonaceous material. These results thus point to a cooperative effect between water and carbonaceous species that induces SiOx growth.